Abstract
GaAsBi is an interesting ternary material for opto-electronic applications. Bi fractions of 11-13% allow 1.55 μm emissions from a range of bulk and QW structures. GaAsBi has shown strong room temperature photoluminescence. The temperature insensitive band gap and large spin orbit splitting are attractive optoelectronic features, however the typical full width half maximum is 2.5 times greater than GaAs. In solid source molecular beam epitaxy (MBE), near stoichiometric fluxes and low growth temperatures are necessary to achieve the desired Bi content. In order to explore photoluminescence linewidth broadening and the accommodation of strain a joint scanning tunnelling microscopy (STM) and scanning transmission electron microscopy (STEM) study of quasi-bulk and QW structures has been undertaken.
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