Abstract
AbstractWe reported the growth of AlPN by solid source molecular beam epitaxy (MBE). N content in AlPN showed less temperature dependence than GaPN. The surface morphology degraded at lower growth temperatures even though the N contents were almost the same. A cross‐sectional transmission electron microscopy (X‐TEM) image revealed that the surface roughening leads to stacking faults. In the case of films grown above 600 °C, atomically smooth surface was obtained. A dislocation‐free AlPN layer with abrupt GaP/AlPN heterointerface was obtained (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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