GaAs-AlGaAs quantum cascade lasers: physics, technology, and prospects

Abstract

In recent years, the performance of GaAs-AlGaAs-based quantum cascade (QC) lasers has improved markedly. These devices are capable of pulsed room temperature operation and can deliver respectable average powers (11 mW at /spl lambda//spl sim/9 /spl mu/m) operating on a Peltier cooler. This performance has been achieved by the suppression of thermally activated carrier leakage through increases in the heterobarrier band offset. We demonstrate that QC lasers, with wavelengths /spl lambda//spl ges/9 /spl mu/m, can operate using heterostructures encompassing the entire composition range of Al/sub x/Ga/sub 1-x/As, without encountering potential problems-of the satellite X-minima for x>45%. Furthermore, we present particular characteristics of these devices, such as a phonon-limited temperature dependence, electrical and optical self-oscillations, and novel design concepts that exploit this closely lattice matched material system. Finally, we discuss improvements in device fabrication to lower the operating current through a reduction of the area of current injection. Using this technology, devices can be designed to selectively pump the fundamental lateral mode. We, therefore, observe single spatial-mode operation over the entire current range of operation.