Abstract

Data are presented showing that low-threshold (300 °K) visible-spectrum GaAs1−yPy and In1−xGaxP1−zAsz DH laser diodes can be grown on GaAs1−yPy substrates of composition at least as high as y=0.41, which corresponds to a short-wavelength limit of ∼6420 Å for the ternary and ∼6180 Å for the quaternary.

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