Abstract
The stability of sputter deposited dielectric film (SiO2 and Al2O3)-mirror facet interfaces of AlGaAs/GaAs DH laser diodes under Kr laser irradiation is evaluated by using current-voltage characteristics, junction photocurrent spectra, Auger sputtering profiles and ellipsometric analysis. For SiO2 coated laser diodes, Ga out-diffusion into the SiO2 film and facet oxidation occur with photoexcitation, resulting in an increase and a decrease in junction photocurrent below and above the active layer band gap energy, respectively, and an increase in the leak current (2kT component). Al2O3 coated laser diodes were stable against irradiation. The Al2O3 film-mirror facet interface is more stable than the SiO2 film-mirror facet interface.
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