GaAs x-ray detectors with sub-nanosecond temporal response.

Abstract

Fast semiconductor radiation detectors operated in current mode provide a valuable diagnostic in pulsed power applications. Si detectors are common due to the availability of high-quality materials and mature fabrication processes, but they offer low absorption for hard x-rays above ∼10 keV. GaAs can provide increased hard x-ray absorption for the same detector volume due to a higher atomic number. GaAs photodiodes have been produced from epitaxial material grown at Sandia National Laboratories and fabricated at Sandia's microfabrication facility. These detectors have significantly higher hard x-ray absorption (>10× at 15 keV) and nearly identical temporal impulse response to similarly sized Si detectors of 0.5 ns full-width half maximum.