Abstract
We report on the successful GaAs surface passivation with GaS thin film grown by MBE employing the single precursor, tertiarybutyl-gallium sulfide-cubane ([(t-Bu)GaS]/sub 4/). GaAs bandgap PL intensity increased by passivating with GaS and has been maintained for a year. Furthermore, we investigated the relationship between the interface state density and the GaAs surface reconstruction before GaS passivation. The PL intensity for c(4/spl times/4)As was largest among the surface reconstructions investigated. Also, a minimum interface state density as low as 5/spl times/10/sup 10/ eV/sup -1/ cm/sup -2/ was obtained for an Al/GaS/n-GaAs MIS structure of c(4/spl times/4)As. In addition, we demonstrated the feasibility of GaS passivation for device applications.
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