Abstract
We report on the successful GaAs surface passivation with GaS thin film grown by molecular beam epitaxy employing the single precursor, tertiarybutyl-galliumsulfide-cubane ([(t-Bu)GaS]4). We found that the GaAs surface reconstructions before GaS passivation influenced the interface state density. As a result, the largest GaAs bandgap photoluminescence intensity and a minimum interface state density of as low as 5×1010 eV-1 cm-2 were obtained for an As-terminated c(4×4) structure.
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