Abstract
GaAs substrate crystals with low dislocation density (Etch-Pit Density (EPD) < 500 cm−2) and Si-doping (≈ 1018 cm−3) are required for the epitaxial production of high-power diode-lasers. Large-size wafers (≥ 3 in) are needed for reducing the manufacturing costs. These requirements can be fulfilled by the Vertical Bridgman (VB) and Vertical Gradient Freeze (VGF) techniques. For that purpose we have developed proper VB/VGF furnaces and optimized the thermal as well as the physico-chemical process conditions. This was strongly supported by extensive numerical process simulation. The modeling of the VGF furnaces and processes was made by using a new computer code called CrysVUN++, which was recently developed in the Crystal Growth Laboratory in Erlangen.
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