Abstract
Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs:As) that detect 1.3- mu m light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs:As, this work may open the way for an all-GaAs 1.3- mu m optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1- mu m-thick layer of GaAs:As. MSM structures with GaAs:As as the optically active material were also made.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
