Abstract
The GaAs quantum dots (QDs) on an AlGaAs∕GaAs (111)A surface grown by a droplet epitaxy have a density of 1.6×1011∕cm2, which is relatively higher than those (1.3×1010∕cm2) on an AlGaAs∕GaAs (001) surface. The formation of highly dense GaAs QDs on the (111)A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAs∕GaAs (111)A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAs∕GaAs (001), indicating that the QDs on the GaAs (111)A substrate have a high crystal quality and high uniformity than those on GaAs (001).
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