Abstract
A very high power density GaAs pseudomorphic HEMT with a saturated output power density of 1.6 W/mm at 2 GHz is presented. To the authors' knowledge this is the highest reported value for GaAs HEMTs. A transistor with 2.5 mm gate width delivers a saturated output power of 4 W. The PAE at saturation is 62 %. The measurements are performed in CW mode on an unthinned GaAs wafer.
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