GaAs negative conductance junction field effect transistor

Abstract

Junction FET's were fabricated from n-type epitaxial GaAs on p-type GaAs substrates, the substrate acting as the gate. These devices showed a negative differential conductance in the drain current-voltage characteristics. A notch (i.e., thinner region) in the channel gave increased negative conductance when at the cathode end of the channel but only the ordinary saturating characteristic when used at the anode end of the channel. No Gunn oscillations were detected but the negative conductance is believed to be due to intervalley transfer effects. The devices were used in bistable circuits and oscillators.