Abstract
The explanation of the F character of the {001} faces of GaAs crystals grown by the classical vapour phase method, has been searched by looking for the possibility of stabilization of steps, under the influence of gallium monochloride and arsenic adsorption. In agreement with current theories, such a stabilization can occur when a cohesive two-dimensional adsorption layer interacting with the surface atoms can be built. The good accordance between the two lattice planes (001) of GaCl 2 and GaAs has led us to suggest that the adsorption of gallium monochloride could take place by formation of Cl-Ga-As mixed tetrahedrons. This hypothesis has permitted us to obtain a theoretical mixed adsorption layer GaCl, As. The cohesion of this layer is assured by two periodic bond chains (PBC) along the [1 1 0] and [310] of the substrate. The first PBC is formed by the Ga-As bonds encountered in the GaAs structure. The second PBC is formed by the Ga-Cl bonds encountered in the GaCl 2 structure.
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