Abstract

GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a DD dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

Highlights

  • The concepts of nonionizing energy loss (NIEL)and displacement damage dose (DDD) have been shown to be useful for correlating displacement damage produced by different particles in irradiated semiconductor [1,2,3,4,5,6,7,8,9]

  • This research has culminated over the past few years in the context of solar cell degradation in the production of a MATLAB-based software package called Solar Cell Radiation Environment Analysis Models (SCREAM) [10, 11]

  • The purpose of this paper is to demonstrate that when operating a GaAs diode in forward bias voltage mode, the measured dark current can be used as a metric for measuring the amount of absorbed displacement damage over a large proton energy range

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Summary

Introduction

The concepts of nonionizing energy loss (NIEL)and displacement damage dose (DDD) have been shown to be useful for correlating displacement damage produced by different particles in irradiated semiconductor [1,2,3,4,5,6,7,8,9]. The BDD data were used as input to provide a time dependent accumulation of the DDD behind the coverglass and adhesive shielding and the associated solar cell degradation was determined. In this case the onorbit solar cell degradation and model calculations remained to disagree which effectively eliminated the cell degradation as the issue. For the TacSat spacecraft [13], the solar array output was degrading at a much higher rate than expected which prompted a reanalysis of the environment and damage assessments In this case, there were two payloads on-board the spacecraft to directly use on the analyses: 1) the Compact

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