Abstract
The measured degradation of epitaxial shallow homojunction n+p InP solar cells under 1-MeV electron irradiation is correlated with that measured under 3-MeV proton irradiation based on ‘displacement damage dose’. The measured data are analyzed as a function of displacement damage dose from which an electron-to-proton dose equivalency ratio is determined which enables the electron and proton degradation data to be described by a single degradation curve. It is discussed how this single curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the radiation response of InP and GaAs/Ge cells on an absolute damage energy scale. The comparison shows InP to be inherently more resistant to displacement damage deposition than the GaAs/Ge.
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