GaAs-Based Transverse Junction Superluminescent Diodes With Strain-Compensated InGaAs–GaAsP Multiple-Quantum-Wells at 1.1-$\mu$m Wavelength

Abstract

In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As-GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</sub> P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</sub> strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-μm wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance ~1-μm VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.