Abstract
Electrically-pumped GaAs-based 1.53 µm vertical cavity surface emitting lasers operating in pulsed mode at room temperature and continuous wave (CW) up to 20°C are reported for the first time. The lasers employ a GaInNAsSb/GaNAs multiple quantum well active region, a selectively oxidised AlAs aperture and p- and n-doped Al(Ga)As/GaAs distributed Bragg reflectors. Typical devices have room-temperature pulsed threshold current densities of 8.3 kA/cm2 and threshold voltages of 5.5 V. CW threshold currents as low as 2.87 mA for a 7 µm aperture device were observed at 15°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
