Abstract
We have demonstrated low threshold current operation of a grating-coupled surface-emitting strained-InGaAs single quantum well laser with a distributed Bragg reflector. By considering the field discontinuity at the gain/grating section interface, our calculations show that the GaAs optical confinement structure can provide high effective reflectivity in the grating section. As a result, continuous wave threshold currents as small as 15 mA were attained at 22 °C, which is the lowest threshold current reported for a grating-coupled surface-emitting laser fabricated without epitaxial regrowth.
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