Abstract
We present results of GaAs-based microlasers with photonic crystal mirrors. The lasers are fabricated from GaAs∕AlGaAs layer structures with a doub1e GaInNAs quantum well emitting at 1.3μm wavelength. The devices are realized as ridge waveguide lasers with two coupled cavities and a total length between 175 and 600μm. Photonic crystals are used to define the front and back mirrors of the lasers. Threshold currents around 40mA and output power levels of 80mW were achieved. Single-mode emission with 30dB side-mode suppression ratio is obtained due to mode interference between the two cavities.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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