Abstract
Physical basis of using the controlled defect formation in InGaAs heteroepitaxial layers to vary the carrier lifetime is considered. It is shown that the lifetime of nonequilibrium carriers in the base layers of a diode can be controllably varied from several to hundreds of nanoseconds. The results obtained in a study of (i) structural defects and their rearrangement related to the lattice mismatch between the heteroepitaxial InGaAs layer and the GaAs substrate and (ii) influence exerted by these defects on the carrier lifetime and on the voltage blocked by diode structures are reported. Dynamic switching characteristics of high-speed power heteroepitaxial diodes at different temperatures are presented.
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