Abstract

The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10/sup -6/<J<10/sup 0/ A/cm/sup 2/. The irradiation dose 3.6 10/sup 14/ cm/sup -2/ decreased the lifetime of nonequilibrium carriers for deep-level recombination in the space charge region by up to 2 orders of magnitude. The irradiation dose of 1.8 10/sup 15/ cm/sup -2/, or anneal in the range 300-800 K did not change the lifetime.

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