Abstract
Direct band edge is a crucial factor for a functional chalcogenide to be applied in luminescence devices, photodetectors, and solar-energy devices. In this work, the room-temperature band-edge emission of III–VI Ga2Se3 has been first observed by micro-photoluminescence (μPL) measurement. The emission peak is at 1.85 eV, which matches well with the band-edge transition that is measured by micro-thermoreflectance (μTR) and micro-transmittance (μTransmittance) for verification of the direct band edge of Ga2Se3. The temperature-dependent μTR spectra of Ga2Se3 show a general semiconductor behavior with its temperature-energy shift following Varshni-type variation. With the well-evident direct band edge, the peak responsivities of photovoltaic response (∼6.2 mV/μW) and photocurrent (∼2.25 μA/μW at f = 30 Hz) of defect zincblende Ga2Se3 can be, respectively, detected at ∼2.22 and ∼1.92 eV from a Cu/Ga2Se3 Schottky solar cell and a Ga2Se3 photoconductor. On the basis of experimental analysis, the optical band edge and photoresponsivity properties of a III–VI Ga2Se3 defect semiconductor are thus realized.
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