Abstract
Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga2O3 with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, Ga2O3 and Ga2O3(Sn) samples with tin content of 0–13 at.% prepared by aqueous co-precipitation method were investigated by X-ray diffraction, nitrogen adsorption isotherms, X-ray photoelectron spectroscopy, infrared spectroscopy and probe molecule techniques. The introduction of tin leads to a decrease in the average crystallite size, increase in the temperature of β-Ga2O3 formation. The sensor responses of all Ga2O3(Sn) samples to CO and NH3 have non-monotonous character depending on Sn content due to the following factors: the formation of donor centers and the change of free electron concentration, increase in reactive chemisorbed oxygen ions concentration, formation of metastable Ga2O3 phases and segregation of SnO2 on the surface of Ga2O3(Sn) grains.
Highlights
The materials based on Ga2 O3 have attracted great attention for electronic applications because of its exceptional properties, such as large bandgap, high transmittance in the deep ultraviolet region, physical and chemical stability [1,2]
We report on the synthesis of nanocrystalline materials Ga2 O3 and
We propose materials suitable for high temperature gas sensors for real-time monitoring of automobile exhaust gases and flue pollutant gases from the energy conversion and chemical technologies processes, such as combustion of biofuels, organic waste, wood, etc
Summary
The materials based on Ga2 O3 have attracted great attention for electronic applications because of its exceptional properties, such as large bandgap, high transmittance in the deep ultraviolet region, physical and chemical stability [1,2]. Strong reducing gases (such as CO), especially in an oxygen-deficient atmosphere at high temperatures, can react with oxide’s lattice oxygen, which can lead to a decrease in the stability and restoring of resistive type sensors [5]. Ga2 O3 -based materials are perspective for the detection of both oxidizing (O2 [3,6,7]) and reducing gases such as CO [7,8], H2 [3,7], CH4 [3], ethanol [3,9] and acetone [9] in high temperature environment. At the same time, the introduction of any extrinsic donor leads to a complex distribution of these elements between surface and volume of grains of semiconductor oxide matrix that affects its microstructure and surface reactivity and alters the gas sensor properties.
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