Ga + ion irradiated a-As 2S 3 layers

Abstract

The ion-induced structural changes in evaporated layers of a-As 2S 3 under the action of Ga + ions with energy 19 keV and doses between 10 12 and 10 15 ions cm −2 are studied. It is shown that the solubility of the evaporated layers of As 2S 3 increases under Ga + ion irradiation at a dose up to 10 14 ions/cm 2 and decreases at a dose of more than 10 14 ions/cm 2. It is found that the ion-induced changes in the solubility of the layers occur at a depth greater than the penetration range calculated by the TRIM code of the Ga + ions. It is found that the effect of Ga + ions irradiation on As 2S 3 layers is similar to that observed with Au + ions. The ion-induced changes in the solubility of As 2S 3 layers irradiated with Au +, Ga + (19 keV) and Au +, Pd + (500 keV) are followed. It is established that the mass and the energy of the ions are a predominant factor for ion-induced phenomena. The results obtained provide the data for understanding ion-induced phenomena in evaporated layers of chalcogenide glasses. The results are promising for nanotechnologies, nonconventional optics, etc.