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Open Accesshttps://doi.org/10.1088/1742-6596/816/1/012009
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Cite Publication Date: Mar 1, 2017 | |
 Citations: 1 |  License type: cc-by |
Affiliation: Ioffe Institute, ITMO University
Authors represent utilizing UHV Ga FIB for preparing a Si3N4/GaN substrate for submicron selective-area epitaxy. In result, GaN submicron stripes were grown in the 100, 200 and 500 nm windows of a Si3N4 mask layer. SEM investigations show good crystalline perfection of the grown stripes.
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