Ga 0.97Mn 0.03As epitaxial layers grown from Ga–Mn–As–Bi solutions by liquid-phase epitaxy

Abstract

The liquid phase epitaxial growth of Ga 0.97Mn 0.03As from Ga–Mn–As and Ga–Mn–As–Bi solutions were investigated. The addition of 10 at.% of Bi to the Ga–Mn–As solution increases the growth rate of the grown epilayers nearly 4.4 times than in the case of Ga 0.97Mn 0.03As layers from Bi solution. Above 9 at.% of Bi in Ga solution, the problems associated with the edge growth were almost eliminated.