Abstract
The liquid phase epitaxial growth of Ga0.97Mn0.03As from Ga–Mn–As and Ga–Mn–As–Bi solutions were investigated. The addition of 10 at.% of Bi to the Ga–Mn–As solution increases the growth rate of the grown epilayers nearly 4.4 times than in the case of Ga0.97Mn0.03As layers from Bi solution. Above 9 at.% of Bi in Ga solution, the problems associated with the edge growth were almost eliminated.
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