G-doping junction-formation mechanism

Abstract

Recently, geometry-induced quantum effects in periodic low-dimensional structures were introduced and observed. Geometry-induced doping or G-doping has been shown to originate from nanograting. The resistivity, Hall coefficient, and magnetoresistance temperature dependences of the nanograting layers were recorded. G-doping junctions, termed p–p(v) junctions, have been fabricated in p-Si substrates and studied experimentally. Here, a p–p(v) junction-formation mechanism, based on previously obtained experimental data, is reported. The G-doping depth, carrier concentration, depletion layer thickness, and junction current are calculated and compared with experimental values. A voltage-dependent doping level, p(v), and corresponding physical mechanism is introduced, which explains the low values of the built-in potential barrier (approximately KT), and low normalized reverse currents. High saturation currents are explained by the thermionic emission of majority carriers. The calculated I(V) dependence is in good agreement with the recorded I–V curves.