Abstract

Fast charge recombination rate and low visible light response have always been the main restricting factor to the photocatalytic performance of graphitic carbon nitride (g-C3N4). The use of semiconductors to construct composites with g-C3N4 has been shown to be an effective way to boost the photocatalytic activity of g-C3N4. In this work, g-C3N4/ZrO2 composite photocatalyst was prepared by simple sonication method using synthesized g-C3N4 and hydrothermally synthesized zirconium oxide (ZrO2) nanoparticles. The photocatalytic activity of as-prepared samples was investigated by Rhodamine B (RhB) degradation under sunlight. The g-C3N4/ZrO2 composites show superior degrading performance than raw g-C3N4 and ZrO2. All pure and composite materials are characterized by XRD, UV–Vis DRS, FT-IR, XPS, SEM, EDX, HR-TEM, BET, PL, and electrochemical measurements to determine the source of the high photoactivity of the g-C3N4/ZrO2 composites. The outcomes of the characterization showed that ZrO2 nanoparticles were evenly dispersed into the layer of g-C3N4. When compared to raw g-C3N4 and ZrO2, the g-C3N4/ZrO2 composites minimize charge transfer resistance and effectively prevent electron-hole recombination. It also has an effect on the band structure and boosts visible-light absorption. Simultaneously, the radical trapping experiments and ESR study exhibited that .O2− and h+ were the most active species in the catalytic process.

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