Fusion neutron irradiation effects on electric characteristics of semiconductor electronic devices.

Abstract

Elementary semiconductor electronic devices were irradiated at room temperature with 14-MeV neutrons from the RTNS-II or the OKTAVIAN. Typical effects of 14-MeV neutron irradiation on the electric characteristics of the devices are tabulated. We define hardness level to mean the 14-MeV neutron fluences at which important performance parameters of the devices begin to degrade (on the whole degrade 10%). The hardness levels are standards of life spans of devices used in a fusion neutron environment and data on them are useful for optimum design of electronic instruments for a fusion reactor. The hardness levels were 1011–1013 n/cm2 for bipolar transistors, 1013–1014 n/cm2 for EETs, −1015 n/cm2 for diodes, −1011 n/cm2 for linear integrated circuits and 1013–1015 n cm2 for logic gate integrated circuits.