Abstract
High resolution RBS and channeling analysis of furnace- and laser-annealed silicon samples implanted with bismuth ions indicates substitutional bismuth concentrations up to 3 × 10 20 cm −3, two orders of magnitude higher than its equilibrium solubility limit. Furnace annealing of samples containing higher bismuth concentrations causes an outward diffusion and surface segregation of a large fraction of bismuth atoms. Pulsed laser induced redistribution in the as-implanted bismuth depth profile is attributed to melting of a few thousand ångström at the silicon surface. Calculated fits to the measured laser-modified profiles yield an effective distribution coefficient k eff ∼ 0.6 for bismuth.
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