Abstract
A survey of the present state of MOS physics and technology is given. After a short introduction into the principles governing the electrical behavior of MOS structures, technological steps and problems to fabricate the elements are discussed. The properties of the silicon surface, the Si-SiO2 interface, the oxide, and the metal electrodes are described. A special section is concerned with ion implantation used in MOS technology. In each case, device aspects are considered.
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