Abstract

Previously we focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, where f is the focal length of the Fourier-transform element (FTE), that is, a cylindrical mirror in-between the orthogonal resonator branches. This 4f set-up can be called “retracted once” due to the reflective filter after 2f; that is, the 2f path was used forwards and backwards. Now the branches are retracted once more resulting in a compact 1f long linear resonator (called “retracted twice”) with a round-trip length of 2f. One facet accommodates the filter, while the other houses the FTE, now incorporating a film-waveguide lens. The BAL facet with the filter represents both the Fourier-transform plane (after 2f, i.e., one round-trip) as well as the image plane (after 4f, two round-trips). Thus filtering is performed even after 4f, not just after 2f. Experimental results reveal good fundamental TMS for pump currents up to 20% above threshold and a one-dimensional beam quality parameter M1D2 = 1.47. The BALs are made from AlGaInAsSb, but the concept can equally well be employed for BALs of any material system.

Highlights

  • Broad area lasers (BALs) allow for the generation and extraction of higher light output powers as compared to conventional narrow stripe lasers

  • We focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering

  • In order to have an in situ etch-depth control with this demanding accuracy we have successfully employed an adequate measurement techniques, by transferring the concept of reflectance anisotropy spectroscopy (RAS), which is well-known from epitaxy for growth control [29,30,31,32,33,34,35], to reactive ion etching (RIE) of monocrystalline semiconductor layer sequences [36,37,38,39]

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Summary

Introduction

Broad area (semiconductor diode) lasers (BALs) allow for the generation and extraction of higher light output powers as compared to conventional narrow stripe lasers. In most cases either the BAL facets or the lateral (effective) refractive index or pump current distributions are modified [1,2,3,4,5,6,7,8] (if so including transverse Bragg gratings [7, 8]) or an external cavity is used [7,8,9,10,11,12,13,14] to achieve the desired transverse mode selection (TMS) (and if applicable to stabilize a longitudinal mode [7, 8]) In all these cases eventually spatial frequency filtering is performed. In order to achieve fundamental mode TMS a low-pass filter has to be applied

Concepts
Technological Work
Experimental TMS Results and Discussion
Conclusions
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