Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures

Abstract

The fundamental relationship between excitonic photoluminescence (PL) intensity and excitation intensity in semiconductor quantum well structures is developed. This relationship is further simplified in the regime of low excitation, and used for a fit function of the Arrhenius plot of time-integrated PL intensity. The proposed four fit parameters are definitely correlated to the distinct characteristic quantities of the sample material, which are the binding energy of excitons, the activation energy, the scattering time, and the background concentration in the well. The validity of the model has been confirmed using our experiments.