Abstract
By Mg doping of ZnS, the lattice constants and the band gap of Zn1−XMgXS host material were increased. The emission spectrum of Mn in Zn1−XMgXS shifted to shorter wavelengths than that of ZnS:Mn. The electroluminescent (EL) devices fabricated with the source of X=0.32 show 552 nm peak yellowish–green emission. Deposition conditions for the Zn1−XMgXS:Mn phosphor layer were optimized to obtain bright emission. As a result, the Zn1−XMgXS:Mn EL devices have a luminance of 282–333 cd/m2 which is as high as that of the conventional ZnS:Mn EL devices.
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