Abstract
At real surfaces, atomic reconstruction generates a surface stress tensor that influences all subsequent surfaces processes like roughening, cluster formation, nucleation, adsorption layer characteristics, and layer flow kinetics. Here, computer simulation results using semiempirical potential energy functions for the Si–Ga–As and Al–Ga–As systems are used to illustrate some important long-range effects on ledge/ledge interaction and cluster excess energy that would not have been anticipated using the conventional dangling bond viewpoint. New insight has also been added to adsorption layer isotherm considerations and an equation for crystal growth velocity, which incorporates gas phase transport, surface transport, ledge attachment kinetics, plus ledge trapping of adsorbate species, is given.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
