Abstract
In the growth of group-III nitride crystals on sapphire substrates, insertion of a low-temperature-deposited thin buffer layer is very important. X-ray CTR (crystal truncation rod) measurement was conducted for sapphire substrate, sapphire of which surface was treated with nitridation process, and 100 Å-thick AIN grown on sapphire. The X-ray CTR was observed for these samples. Theoretically calculated X-ray CTR spectra were shown for sapphire substrate and sapphire with thin grown layers. The calculation suggests that the X-ray CTR scattering measurement is a very powerful tool to investigate the structures of AlGaN crystals grown on sapphire substrate.
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