Abstract
The features of the structural formation and chemical composition of thin films of tungsten oxide grown under various conditions of pulsed laser deposition on a substrate of single crystal silicon carbide followed by annealing have been investigated. To obtain doped films of tungsten oxide deposited by the laser plume expanding from a tungsten target, an additional deposition of Pt, Ti, and Ta atoms was carried out. In some cases a thin film of a catalytically active metal (platinum) was deposited on the oxide layer formation. The structural state of the films was investigated by X-ray diffraction, electron and atomic force scanning microscopy, and Raman spectroscopy. The gas-sensing properties of the Pt-oxide-SiC structures were investigated by measuring the current-voltage characteristics at 300°C in air and air mixtures with hydrogen (2 vol %). It has been established that the deposited metal oxide films are significantly different in morphology and structure on micro- and nanoscales. This had a significant impact on the magnitude of the response to hydrogen and the mechanisms determining the gas-sensing properties: current passage in oxide and the magnitude of the potential barriers at the interfaces of the structure.
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