Abstract
Abstract Here, we copolymerize a monomer containing naphthyl group with 2-hydroxyethyl methacrylate (HEMA) and glycidyl methacrylate (GlyMA) in various molar ratio to obtain copolymers as functional gate dielectric layers of thin-film transistors (TFTs). Using naphthyl-containing molecule to have similar chemical structure with pentance to adjust the grain size of semiconductor. The results indicated that the semiconductor grains size decreased as molar percentage of naphthyl-containing compound in the polymer structure increased, which could also affect the charge carrier mobility of the pentacene thin-film transistors (TFTs). Therefore, this can be a promising manner to fabricate pentacene TFTs with a high charge carrier mobility by using functionalized dielectric layers to obtain uniform grain size of the pentacene semiconductor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
