Abstract
A high linear output power two-stage GaAs heterojunction bipolar transistor (HBT) power amplifier MMIC is reported. The input, interstage and output matching circuits are designed for wideband and low-voltage operations, and are fully integrated into an MMIC chip. The power amplifier measured with 54 Mbits 64-QAM OFDM signals at a collector supply voltage of 3.3 V showed linear output power of higher than 23.2 dBm at an error vector magnitude of 3.0% in a frequency range 3.3–3.6 GHz.
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