Abstract
This work presents a fully planar, nondestructive readout, and high-performance impact ionization random access memory (I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> 2</sup> -RAM) cell having static random access memory (SRAM) characteristics. The proposed memory cell consists of a bipolar I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> MOSFET (BIMOS) whose source region is shared with the drain region of a control gate (CG)-nMOS. The proposed I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -RAM offers excellent static characteristics, including write “1” (W1) time of ~0.5 ns, superior nondestructive readout time of ~0.4 ns, and sense margin (SM) of ~242 μA/μm at room temperature (300 K). The proposed I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -RAM cell also shows a static retention time (RT) >3600 s at a lower supply voltage of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 1.1 V for 300 K and 358 K temperatures. It additionally has a high read current ratio of ~ 2×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> and ~ 4×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> at temperatures 300 and 358 K, respectively. The proposed I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -RAM cell is promising candidate for embedded-RAM and high-performance applications.
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