Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors

Abstract

In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an ${n}^{+}$ - ${p}$ - ${n}^{+}$ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top–down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of ~23- $\mu \text{A}$ at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.