Abstract
AbstractThis paper presents a 2.12‐GHz GaAs FET dual‐operation‐mode amplifier with a new efficiency‐enhancing technique that employs novel switchable 1:1/1:0 ratio power‐routing schemes. The amplifier switches its operation, depending upon a required power level, to either a low‐power or high‐power mode. The integrated power routers enable all matching requirements in both modes to be satisfied regardless of the operating condition of the reference amplifiers. The measurement results show an improved efficiency performance in a low‐operation power range, as compared to a conventional balanced amplifier, due to the power‐routing schemes and demonstrated dual‐mode operation. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 41–44, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21075
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
