Abstract
AbstractThis paper presents a 2.12‐GHz GaAs FET dual‐operation‐mode amplifier with a new efficiency‐enhancing technique that employs novel switchable 1:1/1:0 ratio power‐routing schemes. The amplifier switches its operation, depending upon a required power level, to either a low‐power or high‐power mode. The integrated power routers enable all matching requirements in both modes to be satisfied regardless of the operating condition of the reference amplifiers. The measurement results show an improved efficiency performance in a low‐operation power range, as compared to a conventional balanced amplifier, due to the power‐routing schemes and demonstrated dual‐mode operation. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 41–44, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21075
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