GaAs FETs: Device Physics and Modeling

Abstract

Since their introduction in 1970 [1] GaAs field effect transistors have occupied an important niche in the microwave industry. GaAs FET amplifiers, oscillators, mixers, switches, attenuators, modulators, and limiters are widely used and highspeed integrated circuits based on GaAs FETs have been developed. The basic advantages of these devices include a higher electron velocity, leading to smaller transit time and faster response, and sxemi-insulating GaAs substrates, which allow one to decrease the parasitic capacitances and simplify the fabrication process.