Abstract
Split capacitance measurements in thin SOI p-i-n gated diodes are performed and discussed. Contrarily to MOSFETs, the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> and p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> contacts of the diode supply instantly minority and majority carriers preventing parasitic deep-depletion and transient effects. The gated diode enables accurate characterization from accumulation to strong inversion. We demonstrate that the diode capacitance curves provide extensive information, such as layer thickness and threshold voltage for both n- and p-type MOSFETs simultaneously. The experimental results are validated and explained through numerical simulations.
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