Speed enhancement of npn SiGe HBT on thin film SOI and thin BOX using substrate bias in (0V–3V) range

Abstract

NPN SiGe HBT on thin film SOI and thin BOX is investigated by applying nominal range of substrate bias (0V–3V) using 2D numerical simulations in MEDICI. A 14% improvement in unity current gain frequency (172 GHz) is obtained for a 0.09 × 1.0 µm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> npn SiGe HBT with 30nm SOI thickness and 100 nm BOX thickness having 3 V body bias, compared to the same HBT having 0 V body bias (151 GHz). A HBT with 30 nm BOX thickness provides 38% improvement in unity current gain frequency (194 GHz) with 3 V body bias, compared to the HBT with 0 V body bias (140.9 GHz). The simulation results suggest that the body biased SiGe HBT with thin SOI and thin BOX is a potential candidate for high frequency RF circuit applications.