Abstract

While models of terahertz frequency plasmons in 2D electron systems are usually developed by reducing the number of spatial dimensions, fully 3D models may be needed for the design and analysis of realistic structures. Using full-wave electromagnetic simulations, we have analysed the plasmons and magnetoplasmons observed in two recent experiments. Here, we demonstrate agreement between the theoretical and the experimental results, and discuss further device characteristics such as plasmon transmission, reflection, absorption, and field distributions. We then compare the 3D full-wave simulations with a 2D model. Finally, we discuss approaches for increasing signal transmission and reducing reflection, with direct relevance for improving future experiments.

Highlights

  • Two-dimensional electron systems (2DESs) are capable of supporting plasmons, which are slow electromagnetic waves caused by collective electron motion

  • While models of terahertz frequency plasmons in 2D electron systems are usually developed by reducing the number of spatial dimensions, fully 3D models may be needed for the design and analysis of realistic structures

  • A full-wave 3D model of the experimental devices showed agreement with the experimental results obtained by gate-modulation, both for plasmons and magnetoplasmons

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Summary

Introduction

Two-dimensional electron systems (2DESs) are capable of supporting plasmons, which are slow electromagnetic waves caused by collective electron motion. The 2DES is a gate, which controls the electron density in the 2DES, and is frequently used for coupling into the free-space radiation Variations of this basic structure have been made, such double-grating-gate, meander-gate, and comb-gate devices [8,9,10,11,12]. Theoretical studies of such devices have been made predominantly with two-dimensional (2D) models [1, 14,15,16,17,18,19,20,21,22,23,24], in which the devices are assumed to be infinitely long in the y -direction (figure 1(a)). 73 μm 75 nm 48.9 μm 19.7 μm 4.4 μm 24 μm 11 μm 14 μm 16 μm 21.9 μm 13.1 μm 20 μm 15 μm 50 μm 1250 nm 12.5 μm

Device structure and modelling considerations
Comparison with experiments: gate-modulation signals
Comparison with experiments: magnetoplasmons
Improving device performance
Conclusions

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