Abstract
This paper describes a full-wave analysis of ultrahigh electromechanical coupling surface acoustic wave (SAW) of Y-cut X propagating Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (YX-PIMNT) single crystals on a cubic silicon carbide (3C-SiC) substrate. There are several eigenmodes including shear horizontal (SH) and Rayleigh SAWs. Based on the finite-element method (FEM), the phase velocity (vp) and coupling factor (K2) of SAWs varying with the top electrode thickness, thickness, and Euler angle (θ) of the YX-PIMNT substrate have been investigated. K2 of SH SAW can reach an extremely high value of 75.9%. The proper control of structural parameters can suppress unwanted responses caused by other modes without deteriorating the coupling factor. The large K2 value of SH SAW and suppression of unwanted responses have highly promising applications in developing ultrawideband and tunable SAW filters. Finally, the performance of 3C-SiC and 6H-SiC as substrates was investigated, and 3C-SiC was identified as a more attractive substrate candidate than 6H-SiC.
Highlights
Surface acoustic wave (SAW) devices are widely used in mobile phones and various modern consumer telecommunication systems [1]
This paper reports a full-wave analysis of YX-PIMNT/3C-SiC substrate conducted via the finite-element method (FEM) with the commercial software package COMSOL Multiphysics
K2 of shear horizontal (SH) SAW is 68.5%, whereas that of other eigenmodes is approximately zero for hPIMNT = 0.3λ. This finding indicates that unwanted responses can be suppressed by choosing a proper thickness of YX-PIMNT, which is extremely attractive in developing wideband and tunable SAW filters
Summary
Surface acoustic wave (SAW) devices are widely used in mobile phones and various modern consumer telecommunication systems [1]. A high electromechanical coupling factor is suitable for the design of ultrawideband SAW filters [2–4]. Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZNT or PZN-xPT), have ultrahigh electromechanical coupling factor k33 (>94%) and piezoelectric constant d33 (>2500 pC/N) near the morphotropic phase boundary at room temperature [5–9]. PMNT 130∘C) and single phase ctrryasntasiltsiohnavetelmowpeCruatruieretem(TprTera≈ture8(5T∘Cc ≈); these characteristics limit their applications under high temperatures. 3C-SiC is an attractive candidate substrate given its high velocity and K2 [15, 16]. The variation in the phase velocity (Vp) and coupling factor (K2) of SAWs with the top electrode thickness, thickness, and Euler angle (θ) of the YX-PIMNT substrate was investigated. The large K2 value of SH SAW and suppression of unwanted responses extremely have highly promising applications in developing ultrawideband and tunable SAW filters. Investigated, and 3C-SiC was found to be a more attractive substrate candidate than 6H-SiC
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