Abstract
Perovskite photoconductor-type photodetector with metal–semiconductor–metal (MSM) structure is a basic device for photodetection applications. However, the role of electrode interlayer in MSM-type perovskite devices is less investigated compared to that of the pin diode structure. Here, a systematic investigation on the influence of phenyl-C61-butyric acid methyl ester (PCBM) and indene-C60 bisadduct (ICBA) interfacial layers for MSM perovskite photodetectors is reported. It is found that the fullerene-based interlayer significantly enhances the photocurrent of the MSM photodetectors. On one hand, the PCBM interlayer is more suitable for CH3NH3PbI3 photodetector, with the responsivity two times higher than that of the device with ICBA interlayer. The ICBA layer, on the other hand, becomes more effective when the band gap of perovskite is enlarged with bromine composition, denoted as CH3NH3Pb(I1−xBrx)3 ( 1). It is further found that the specific detectivity of photodetectors with ICBA interlayer becomes even higher than those with PCBM when the bromine compositional percentage reaches 0.6 ().
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.